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669a47a065bcabb13838ec97 Toshiba Semiconductor and Storage SSM6P15FULFTR-ND,SSM6P15FULFCT-ND,SSM6P15FULFDKR-ND https://www.tenettech.com/s/59c9e4669bd3e7c70c5f5e6c/669a47a165bcabb13838eca2/264_6-tssop-percent20sc-88-percent20sot-363.jpg

MOSFET 2P-CH 30V 0.1A US6

Product Attributes:

Series -
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 100mA
Rds On (Max) @ Id, Vgs 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 9.1pF @ 3V
Power - Max 200mW (Ta)
Operating Temperature 150°C
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Grade -
Qualification -
TT-DKEY-SSM6P15FULFTR-ND,SSM6P15FULFCT-ND,SSM6P15FULFDKR-ND
in stock INR 46.08
Toshiba Semiconductor and Storage
1 1

Toshiba Semiconductor and Storage SSM6P15FULFTR-ND,SSM6P15FULFCT-ND,SSM6P15FULFDKR-ND

Sku: TT-DKEY-SSM6P15FULFTR-ND,SSM6P15FULFCT-ND,SSM6P15FULFDKR-ND
₹46.08


Sold By: tenettech
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Description of product

MOSFET 2P-CH 30V 0.1A US6

Product Attributes:

Series -
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 100mA
Rds On (Max) @ Id, Vgs 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 9.1pF @ 3V
Power - Max 200mW (Ta)
Operating Temperature 150°C
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Grade -
Qualification -