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669a48a353119eec999f5107 Vishay Siliconix SI9945BDY-T1-GE3TR-ND,SI9945BDY-T1-GE3CT-ND,SI9945BDY-T1-GE3DKR-ND https://www.tenettech.com/s/59c9e4669bd3e7c70c5f5e6c/669a48a353119eec999f5112/742percent7e5498percent7edypercent2c-eypercent7e8.jpg

MOSFET 2N-CH 60V 5.3A 8SOIC

Product Attributes:

Series TrenchFET®
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 5.3A
Rds On (Max) @ Id, Vgs 58mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 15V
Power - Max 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Grade -
Qualification -
TT-DKEY-SI9945BDY-T1-GE3TR-ND,SI9945BDY-T1-GE3CT-ND,SI9945BDY-T1-GE3DKR-ND
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Vishay Siliconix
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Vishay Siliconix SI9945BDY-T1-GE3TR-ND,SI9945BDY-T1-GE3CT-ND,SI9945BDY-T1-GE3DKR-ND

Vishay Siliconix SI9945BDY-T1-GE3TR-ND,SI9945BDY-T1-GE3CT-ND,SI9945BDY-T1-GE3DKR-ND

Sku: TT-DKEY-SI9945BDY-T1-GE3TR-ND,SI9945BDY-T1-GE3CT-ND,SI9945BDY-T1-GE3DKR-ND
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Description of product

MOSFET 2N-CH 60V 5.3A 8SOIC

Product Attributes:

Series TrenchFET®
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 5.3A
Rds On (Max) @ Id, Vgs 58mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 15V
Power - Max 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Grade -
Qualification -

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