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669a489ba2e791bef29a51ff Infineon Technologies IRF7509TRPBFTR-ND,IRF7509TRPBFCT-ND,IRF7509TRPBFDKR-ND https://www.tenettech.com/s/59c9e4669bd3e7c70c5f5e6c/669a489da2e791bef29a522d/8-tssop_8-msop.jpg

MOSFET N/P-CH 30V 2.7A/2A MICRO8

Product Attributes:

Series HEXFET®
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.7A, 2A
Rds On (Max) @ Id, Vgs 110mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 25V
Power - Max 1.25W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package Micro8™
Grade -
Qualification -
TT-DKEY-IRF7509TRPBFTR-ND,IRF7509TRPBFCT-ND,IRF7509TRPBFDKR-ND
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Infineon Technologies
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Infineon Technologies IRF7509TRPBFTR-ND,IRF7509TRPBFCT-ND,IRF7509TRPBFDKR-ND

Infineon Technologies IRF7509TRPBFTR-ND,IRF7509TRPBFCT-ND,IRF7509TRPBFDKR-ND

Sku: TT-DKEY-IRF7509TRPBFTR-ND,IRF7509TRPBFCT-ND,IRF7509TRPBFDKR-ND
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Description of product

MOSFET N/P-CH 30V 2.7A/2A MICRO8

Product Attributes:

Series HEXFET®
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.7A, 2A
Rds On (Max) @ Id, Vgs 110mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 25V
Power - Max 1.25W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package Micro8™
Grade -
Qualification -

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