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669a48a7c16e31ec92b43066 onsemi FDC6327CTR-ND,FDC6327CCT-ND,FDC6327CDKR-ND https://www.tenettech.com/s/59c9e4669bd3e7c70c5f5e6c/669a48a7c16e31ec92b43073/488percent7emkt-ma06apercent7epercent7e6.jpg

MOSFET N/P-CH 20V 2.7A SSOT6

Product Attributes:

Series PowerTrench®
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.7A, 1.9A
Rds On (Max) @ Id, Vgs 80mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 10V
Power - Max 700mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SuperSOT™-6
Grade -
Qualification -
TT-DKEY-FDC6327CTR-ND,FDC6327CCT-ND,FDC6327CDKR-ND
in stock INR
onsemi
1 1
onsemi FDC6327CTR-ND,FDC6327CCT-ND,FDC6327CDKR-ND

onsemi FDC6327CTR-ND,FDC6327CCT-ND,FDC6327CDKR-ND

Sku: TT-DKEY-FDC6327CTR-ND,FDC6327CCT-ND,FDC6327CDKR-ND
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Description of product

MOSFET N/P-CH 20V 2.7A SSOT6

Product Attributes:

Series PowerTrench®
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.7A, 1.9A
Rds On (Max) @ Id, Vgs 80mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 10V
Power - Max 700mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SuperSOT™-6
Grade -
Qualification -

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