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669a489ff32433bf5c8bb777 Infineon Technologies IRF7309PBFTR-ND,IRF7309PBFCT-ND,IRF7309PBFDKR-ND https://www.tenettech.com/s/59c9e4669bd3e7c70c5f5e6c/669a48a0f32433bf5c8bb7e4/448_8-soic.jpg

MOSFET N/P-CH 30V 4A/3A 8SO

Product Attributes:

Series HEXFET®
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4A, 3A
Rds On (Max) @ Id, Vgs 50mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 15V
Power - Max 1.4W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Grade -
Qualification -
TT-DKEY-IRF7309PBFTR-ND,IRF7309PBFCT-ND,IRF7309PBFDKR-ND
in stock INR
Infineon Technologies
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Infineon Technologies IRF7309PBFTR-ND,IRF7309PBFCT-ND,IRF7309PBFDKR-ND

Infineon Technologies IRF7309PBFTR-ND,IRF7309PBFCT-ND,IRF7309PBFDKR-ND

Sku: TT-DKEY-IRF7309PBFTR-ND,IRF7309PBFCT-ND,IRF7309PBFDKR-ND
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Description of product

MOSFET N/P-CH 30V 4A/3A 8SO

Product Attributes:

Series HEXFET®
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4A, 3A
Rds On (Max) @ Id, Vgs 50mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 15V
Power - Max 1.4W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Grade -
Qualification -

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