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669a483053119eec999f3a8e Toshiba Semiconductor and Storage SSM6N7002KFULFTR-ND,SSM6N7002KFULFCT-ND,SSM6N7002KFULFDKR-ND https://www.tenettech.com/s/59c9e4669bd3e7c70c5f5e6c/669a483153119eec999f3aa8/264percent3b1-2t1spercent3bpercent3b6.jpg

MOSFET 2N-CH 60V 0.3A US6

Product Attributes:

Series -
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 300mA
Rds On (Max) @ Id, Vgs 1.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V
Power - Max 285mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Grade -
Qualification -
TT-DKEY-SSM6N7002KFULFTR-ND,SSM6N7002KFULFCT-ND,SSM6N7002KFULFDKR-ND
in stock INR 30.24
Toshiba Semiconductor and Storage
1 1

Toshiba Semiconductor and Storage SSM6N7002KFULFTR-ND,SSM6N7002KFULFCT-ND,SSM6N7002KFULFDKR-ND

Sku: TT-DKEY-SSM6N7002KFULFTR-ND,SSM6N7002KFULFCT-ND,SSM6N7002KFULFDKR-ND
₹30.24


Sold By: tenettech
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Description of product

MOSFET 2N-CH 60V 0.3A US6

Product Attributes:

Series -
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 300mA
Rds On (Max) @ Id, Vgs 1.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V
Power - Max 285mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Grade -
Qualification -