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6018f43bee82187219efa3d2 BU506DF silicon NPN Power Transistor //cdn1.storehippo.com/s/59c9e4669bd3e7c70c5f5e6c/6018f43bee82187219efa3d4/webp/transis-big.jpg

BU506DF NPN Transistor

  • High Voltage
  • High Switching Speed
  • Built-in Integrated Efficiency Diode

Applications:  Designed for use in horizontal deflection circuits of color TV receivers and in line-operated switch-mode applications


Specification:

  • VCESM collector-emitter peak voltage VBE = 0 − 1500 V
  • VCEO collector-emitter voltage open base − 700 V
  • VCEsat collector-emitter saturation voltage IC = 3 A; IB = 1.33 A; see Figs 7 and 8 − 1 V
  • VF diode forward voltage (BU506DF) IF = 3 A 1.5 2.2 V
  • ICsat collector saturation current − 3 A
  • IC collector current (DC) see Figs 2 and 3 − 5 A
  • ICM collector current (peak value) see Figs 2 and 3 − 8 A
  • Ptot total power dissipation Th ≤ 25 °C; see Fig.4 − 20 W
  • tf fall time inductive load; see Fig.11 0.7 − µs


* Image shown is a representation only.

TT-ECK-4544
in stock INR 49.56
ELECTRON COMPONENT
1 1

BU506DF silicon NPN Power Transistor

Sku: TT-ECK-4544
₹49.56


Sold By: tenettech
Features
  • Shipping in 10-12 Working days

Description of product

BU506DF NPN Transistor

  • High Voltage
  • High Switching Speed
  • Built-in Integrated Efficiency Diode

Applications:  Designed for use in horizontal deflection circuits of color TV receivers and in line-operated switch-mode applications


Specification:

  • VCESM collector-emitter peak voltage VBE = 0 − 1500 V
  • VCEO collector-emitter voltage open base − 700 V
  • VCEsat collector-emitter saturation voltage IC = 3 A; IB = 1.33 A; see Figs 7 and 8 − 1 V
  • VF diode forward voltage (BU506DF) IF = 3 A 1.5 2.2 V
  • ICsat collector saturation current − 3 A
  • IC collector current (DC) see Figs 2 and 3 − 5 A
  • ICM collector current (peak value) see Figs 2 and 3 − 8 A
  • Ptot total power dissipation Th ≤ 25 °C; see Fig.4 − 20 W
  • tf fall time inductive load; see Fig.11 0.7 − µs


* Image shown is a representation only.