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BU508AF silicon NPN Power Transistor

Description of product

BU508AF NPN Transistor

  • High Voltage
  • High Switching Speed
  • Built-in Integrated Efficiency Diode

Applications:  Designed for use in horizontal deflection circuits of color TV receivers and in line-operated switch-mode applications


Specification:

  • VCESM collector-emitter peak voltage VBE = 1500 V
  • VCEO collector-emitter voltage open base − 700 V
  • Current - Collector (Ic) (Max) 8A
  • Vce Saturation (Max) @ Ib, Ic 1V @ 1.6A, 4.5A
  • Current - Collector Cutoff (Max) 200µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 100mA, 5V
  • Power - Max 50W
  • Operating Temperature 150°C (TJ)
  • Mounting Type Through Hole


* Image shown is a representation only.