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672a171f81e342002bb0dd61 SS34 Schottky Diode for High-Speed Switching (Pack of 2) https://www.tenettech.com/s/59c9e4669bd3e7c70c5f5e6c/672a172081e342002bb0dd72/ss34-schottky-diode-for-high-speed-switching-2.jpg

SS34 Schottky Diode for High-Speed Switching is a semiconductor diode formed by the junction of semiconductor and metal. It has a low forward voltage drop and a very fast switching action.  The diode is ideal for free-wheeling, secondary rectification, and reverse polarity protection applications.


Features:

  1. Guard ring for overvoltage protection
  2. Low power losses, high efficiency
  3.  Low forward voltage drop
  4.  High surge capability
  5. Maximum repetitive peak reverse voltage(VRRM): 40V
  6. Maximum RMS voltage (VRMS): 28V
  7. Maximum DC blocking voltage (VDC): 40V
  8. Maximum average forward rectified current at TL (IFAV): 3A
  9. Peak forward surge current(IFSM): 100A
  10. Voltage rate of change (rated VR) (dV/dt): 10,000V/μs
  11. Operating junction temperature range (TJ):  -55 to +125°C
  12. Storage temperature range (TSTG):  -55 to +150°C

Package Includes:

1 x SS34 Schottky Diode for High-Speed Switching (2 pcs).

TT-RB-511693
in stock INR 56
1 1

SS34 Schottky Diode for High-Speed Switching (Pack of 2)

Sku: TT-RB-511693
₹56


Sold By: tenettech
Features
  • Shipping in 10-12 Working Days

Description of product

SS34 Schottky Diode for High-Speed Switching is a semiconductor diode formed by the junction of semiconductor and metal. It has a low forward voltage drop and a very fast switching action.  The diode is ideal for free-wheeling, secondary rectification, and reverse polarity protection applications.


Features:

  1. Guard ring for overvoltage protection
  2. Low power losses, high efficiency
  3.  Low forward voltage drop
  4.  High surge capability
  5. Maximum repetitive peak reverse voltage(VRRM): 40V
  6. Maximum RMS voltage (VRMS): 28V
  7. Maximum DC blocking voltage (VDC): 40V
  8. Maximum average forward rectified current at TL (IFAV): 3A
  9. Peak forward surge current(IFSM): 100A
  10. Voltage rate of change (rated VR) (dV/dt): 10,000V/μs
  11. Operating junction temperature range (TJ):  -55 to +125°C
  12. Storage temperature range (TSTG):  -55 to +150°C

Package Includes:

1 x SS34 Schottky Diode for High-Speed Switching (2 pcs).