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606d77cd7d85765b0977c3f1 Schottky Diodes & Rectifiers Pb-F DIODE TO-220-2L V=650 IF=10A //d2pyicwmjx3wii.cloudfront.net/s/59c9e4669bd3e7c70c5f5e6c/606d77cd7d85765b0977c3f3/webp/to-220f-2l_dsl.png

TRSxE65F SiC Schottky Barrier Diodes

Toshiba TRSxE65F SiC Schottky Barrier Diodes exhibit the chip design of 2nd generation and come in TRS6E65F and TRS8E65F variants. The TRSxE65F diodes feature high surge current, small junction capacitance, and small reverse current. These diodes are available in dimensions 10.05mm x 15.3mm x 4.45mm. The TRSxE65F Schottky barrier diodes are ideal to use in power factor correction, uninterruptible power supplies, and DC-DC converters.

TT-MU-757-TRS10E65F,S1Q
in stockINR 870.28304
Toshiba
1 1
Schottky Diodes & Rectifiers Pb-F DIODE TO-220-2L V=650 IF=10A

Schottky Diodes & Rectifiers Pb-F DIODE TO-220-2L V=650 IF=10A

Sku: TT-MU-757-TRS10E65F,S1Q
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Description of product

TRSxE65F SiC Schottky Barrier Diodes

Toshiba TRSxE65F SiC Schottky Barrier Diodes exhibit the chip design of 2nd generation and come in TRS6E65F and TRS8E65F variants. The TRSxE65F diodes feature high surge current, small junction capacitance, and small reverse current. These diodes are available in dimensions 10.05mm x 15.3mm x 4.45mm. The TRSxE65F Schottky barrier diodes are ideal to use in power factor correction, uninterruptible power supplies, and DC-DC converters.

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