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606eceb6bea5f164e5058865 RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V https://cdn1.storehippo.com/s/59c9e4669bd3e7c70c5f5e6c/606eceb6bea5f164e5058867/webp/to_247_ac_3_dsl.png

MRF300 RF Power LDMOS Transistors

NXP Semiconductors MRF300 RF Power LDMOS Transistors feature unmatched input and output, which allows for wide frequency range operation from 1.8MHz to 250MHz. NXP MRF300 LDMOS transistors offer two opposite pin-connection versions (A and B) to be used in a push-pull and two-up configuration for wideband performance. These transistors are housed in an industry-standard TO-247 package, offering flexibility and ease of mounting. The rugged transistors are suitable for high VSWR Industrial, Scientific, and Medical (ISM) applications as well as broadcast, mobile radio, HF/VHF communications, and switch-mode power supplies.

 TT-MU-771-MRF300BN
in stock INR 6737.918
NXP Semiconductors
1 1
RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V

RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V

Sku: TT-MU-771-MRF300BN
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Description of product

MRF300 RF Power LDMOS Transistors

NXP Semiconductors MRF300 RF Power LDMOS Transistors feature unmatched input and output, which allows for wide frequency range operation from 1.8MHz to 250MHz. NXP MRF300 LDMOS transistors offer two opposite pin-connection versions (A and B) to be used in a push-pull and two-up configuration for wideband performance. These transistors are housed in an industry-standard TO-247 package, offering flexibility and ease of mounting. The rugged transistors are suitable for high VSWR Industrial, Scientific, and Medical (ISM) applications as well as broadcast, mobile radio, HF/VHF communications, and switch-mode power supplies.

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