NXP Semiconductors AFV10700H RF Power LDMOS Transistor is designed for pulse applications operating at 1030MHz to 1090MHz. This LDMOS Transistor can also be used over the 960MHz to 1215MHz band at reduced power. This device is suitable for use in defense and commercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS-B transponders, DME, and other complex pulse chains. The AFV10700H RF Power LDMOS Transistor is based on NXP Airfast technology and is contained in a compact, NI-780H-4L (AFV10700H) or NI-780S-4L (AFV10700HS) air cavity package for design flexibility.
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