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606eced44380d3650111d2d6 RF JFET Transistors GaN HEMT DC-6.0GHz, 25 Watt https://cdn1.storehippo.com/s/59c9e4669bd3e7c70c5f5e6c/606eced44380d3650111d2d8/webp/cg2h40025f_dsl.png

CG2H40xx & CG2H30xx GaN HEMTs

Wolfspeed / Cree CG2H40xx and CG2H30xx GaN (Gallium Nitride) HEMTs are High Electron Mobility Transistors designed to operate from a 28V rail. The CG2H40xx and CG2H30xx Transistors offer a general purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities of these HEMTs make it ideal for linear and compressed amplifier circuits. The CG2H40xx and CG2H30xx transistors are available in a wide variety of package types for design flexibility, including screw down, solder down, pill, and flange packages. Typical applications include broadband amplifiers, cellular infrastructure, and radar.

TT-MU-941-CG2H40025F
in stock INR 17593.8708
Wolfspeed / Cree
1 1

RF JFET Transistors GaN HEMT DC-6.0GHz, 25 Watt

Sku: TT-MU-941-CG2H40025F
₹17,593.87


Sold By: tenettech
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Description of product

CG2H40xx & CG2H30xx GaN HEMTs

Wolfspeed / Cree CG2H40xx and CG2H30xx GaN (Gallium Nitride) HEMTs are High Electron Mobility Transistors designed to operate from a 28V rail. The CG2H40xx and CG2H30xx Transistors offer a general purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities of these HEMTs make it ideal for linear and compressed amplifier circuits. The CG2H40xx and CG2H30xx transistors are available in a wide variety of package types for design flexibility, including screw down, solder down, pill, and flange packages. Typical applications include broadband amplifiers, cellular infrastructure, and radar.