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606ecf394380d3650111ddc1 RF JFET Transistors 4.4-5.0GHz 2x15W 50V GaN Dual Channel https://cdn1.storehippo.com/s/59c9e4669bd3e7c70c5f5e6c/606ecf394380d3650111ddc3/webp/qpd0405_series_spl.png

QPD0405 4.4GHz to 5.0GHz GaN RF Transistor

Qorvo QPD0405 4.4GHz to 5.0GHz GaN RF Transistor is a dual-path discrete Gallium Nitride on Silicon Carbide High-Electron Mobility Transistor (GaN on SiC HEMT), in a compact DFN package. Each path provides a single-stage amplifier transistor capable of delivering Saturated Output Power (PSAT) of 22W at +48V. The QPD040 offers a linear gain of 15.4dB, with a drain efficiency of 75%.

 TT-MU-772-QPD0405SR
in stock INR 2708.71832
Qorvo
1 1
RF JFET Transistors 4.4-5.0GHz 2x15W 50V GaN Dual Channel

RF JFET Transistors 4.4-5.0GHz 2x15W 50V GaN Dual Channel

Sku: TT-MU-772-QPD0405SR
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Description of product

QPD0405 4.4GHz to 5.0GHz GaN RF Transistor

Qorvo QPD0405 4.4GHz to 5.0GHz GaN RF Transistor is a dual-path discrete Gallium Nitride on Silicon Carbide High-Electron Mobility Transistor (GaN on SiC HEMT), in a compact DFN package. Each path provides a single-stage amplifier transistor capable of delivering Saturated Output Power (PSAT) of 22W at +48V. The QPD040 offers a linear gain of 15.4dB, with a drain efficiency of 75%.

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