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606ecf3764fa4981b49a9253 RF JFET Transistors 1.8-2.7 GHz 2x15W GaN Dual Channel //d2pyicwmjx3wii.cloudfront.net/s/59c9e4669bd3e7c70c5f5e6c/606ecf3764fa4981b49a9255/webp/qpd0210_high-res.png

QPD0210 Dual GaN RF Transistors

Qorvo QPD0210 Dual GaN RF Transistors are dual-path discrete GaN on SiC High-Electron-Mobility Transistors (HEMTs) in a DFN package. These dual RF transistors operate from 1.8GHz to 2.7GHz frequency range. The QPD0210 dual GaN RF transistors can deliver PSAT of 16.6W at 48V operation through each path. Applications include WCDMA / LTE, macrocell base station driver, microcell base station, small cell, active antenna, and 5G massive MIMO.

 TT-MU-772-QPD0210SR
in stock INR 2708.71832
Qorvo
1 1
RF JFET Transistors 1.8-2.7 GHz 2x15W GaN Dual Channel

RF JFET Transistors 1.8-2.7 GHz 2x15W GaN Dual Channel

Sku: TT-MU-772-QPD0210SR
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Description of product

QPD0210 Dual GaN RF Transistors

Qorvo QPD0210 Dual GaN RF Transistors are dual-path discrete GaN on SiC High-Electron-Mobility Transistors (HEMTs) in a DFN package. These dual RF transistors operate from 1.8GHz to 2.7GHz frequency range. The QPD0210 dual GaN RF transistors can deliver PSAT of 16.6W at 48V operation through each path. Applications include WCDMA / LTE, macrocell base station driver, microcell base station, small cell, active antenna, and 5G massive MIMO.

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