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606ecf7cf9361c814186c2c1 RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V //d2pyicwmjx3wii.cloudfront.net/s/59c9e4669bd3e7c70c5f5e6c/606ecf7cf9361c814186c2c3/webp/qpd1025l_dsl.png

QPD1025 & QPD1025L RF Input-Matched Transistors

Qorvo QPD1025 and QPD1025L RF Input-Matched Transistors are discrete GaN on SiC High Electron Mobility Transistors (HEMT) that have an operating frequency range of 1.0GHz to 1.1GHz. These transistors feature 22.5dB linear gain, 1800W output power, 65V operating voltage, and support both pulse and CW operations. The QPD1025 and QPD1025L transistors are available in industry standard air cavity packages and are ideal for IFF transponders, avionics, and test instrumentation.

TT-MU-772-QPD1025L
in stock INR 127979.7886
Qorvo
1 1

RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V

Sku: TT-MU-772-QPD1025L
₹127,979.79


Sold By: tenettech
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Description of product

QPD1025 & QPD1025L RF Input-Matched Transistors

Qorvo QPD1025 and QPD1025L RF Input-Matched Transistors are discrete GaN on SiC High Electron Mobility Transistors (HEMT) that have an operating frequency range of 1.0GHz to 1.1GHz. These transistors feature 22.5dB linear gain, 1800W output power, 65V operating voltage, and support both pulse and CW operations. The QPD1025 and QPD1025L transistors are available in industry standard air cavity packages and are ideal for IFF transponders, avionics, and test instrumentation.