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GS-EVB-HB-66508B-ON1 Evaluation Board

GaN Systems GS-EVB-HB-66508B-ON1 Evaluation Board consists of an ON Semiconductor NCP51820 gate drive solution with two GS66508B GaN E-HEMT’s in a fully-functional half-bridge. The evaluation board does not include a PWM controller. The board is generic from the point of view that it is not dedicated to one specific topology. This means it can be used in any topology that requires the use of a high-side/low-side FET combination. The evaluation board can be connected to an existing power supply and will replace the HS/LS driver and MOSFETs. The board has a preset, but configurable dead-time control and driver enable/disable. The GaN power switches are rated up to 650V @ 30A, making them well suited for half-bridge topologies operating from a PFC output in the range of 400V. Due to an RDS(ON) temperature dependence, the maximum practical case temperature should not exceed ~90°C (90°C = 1.6xRDS(ON) normalized at 25°C). The evaluation board has only 23 components and its small size allows it to be installed in tight areas. Even with the small size, several pins are available to probe the circuit. HS and LS gate drives, as well as SWN, are accessible. The board allows users to easily evaluate GaN in an ultra-small layout with an NCP51280 gate driver for a highly cost-effective solution.

TT-MU-499-GSEVBHB66508BON1
in stockINR 11953.59352
GaN Systems
1 1
Power Management IC Development Tools 650V, GS66508B, Half Bridge Evaluation Board

Power Management IC Development Tools 650V, GS66508B, Half Bridge Evaluation Board

Sku: TT-MU-499-GSEVBHB66508BON1
₹11,953.59


Sold By: tenettech
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Description of product

GS-EVB-HB-66508B-ON1 Evaluation Board

GaN Systems GS-EVB-HB-66508B-ON1 Evaluation Board consists of an ON Semiconductor NCP51820 gate drive solution with two GS66508B GaN E-HEMT’s in a fully-functional half-bridge. The evaluation board does not include a PWM controller. The board is generic from the point of view that it is not dedicated to one specific topology. This means it can be used in any topology that requires the use of a high-side/low-side FET combination. The evaluation board can be connected to an existing power supply and will replace the HS/LS driver and MOSFETs. The board has a preset, but configurable dead-time control and driver enable/disable. The GaN power switches are rated up to 650V @ 30A, making them well suited for half-bridge topologies operating from a PFC output in the range of 400V. Due to an RDS(ON) temperature dependence, the maximum practical case temperature should not exceed ~90°C (90°C = 1.6xRDS(ON) normalized at 25°C). The evaluation board has only 23 components and its small size allows it to be installed in tight areas. Even with the small size, several pins are available to probe the circuit. HS and LS gate drives, as well as SWN, are accessible. The board allows users to easily evaluate GaN in an ultra-small layout with an NCP51280 gate driver for a highly cost-effective solution.