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606ffdd886fff47d0b8ff91a MOSFET TRENCH >=100V https://cdn1.storehippo.com/s/59c9e4669bd3e7c70c5f5e6c/606ffdd886fff47d0b8ff91c/webp/tdson_6x5_8_dsl.png

OptiMOS™ 3 N-channel MOSFETs

Infineon Technologies OptiMOS™ 3 N-channel MOSFETs feature low on-state resistance in a SuperSO8 leadless package. OptiMOS 3 MOSFETs increase power density up to 50 percent in industrial, consumer and telecommunications applications. OptiMOS™ 3 is available in 40V, 60V and 80V N-channel MOSFETs in SuperSO8 and Shrink SuperSO8 (S3O8) packages. Compared to standard Transistor Outline (TO) packages, the SuperSO8 increase power density by as much as 50 percent.

TT-MU-726-BSC120N12LSGATMA
in stockINR 335.76664
Infineon Technologies
1 1
MOSFET TRENCH >=100V

MOSFET TRENCH >=100V

Sku: TT-MU-726-BSC120N12LSGATMA
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Description of product

OptiMOS™ 3 N-channel MOSFETs

Infineon Technologies OptiMOS™ 3 N-channel MOSFETs feature low on-state resistance in a SuperSO8 leadless package. OptiMOS 3 MOSFETs increase power density up to 50 percent in industrial, consumer and telecommunications applications. OptiMOS™ 3 is available in 40V, 60V and 80V N-channel MOSFETs in SuperSO8 and Shrink SuperSO8 (S3O8) packages. Compared to standard Transistor Outline (TO) packages, the SuperSO8 increase power density by as much as 50 percent.

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