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606ee45386617735b129c3c4 MOSFET TO-247-4L PD=230W 1MHz PWR MOSFET TRNS //d2pyicwmjx3wii.cloudfront.net/s/59c9e4669bd3e7c70c5f5e6c/606ee45386617735b129c3c6/webp/to_247_4_dsl.png

DTMOSIV-H MOSFETs

Toshiba DTMOSIV-H MOSFETs are suited to applications that require high reliability, power efficiency and a compact design, such as high efficiency switching power supplies for servers and telecom base stations, and as power conditioners for photovoltaic inverters. The DTMOSIV-H MOSFETs achieve a high speed switching performance while keeping the low ON-resistance level of conventional DTMOSIV, and without loss of power. This is accomplished through the reduction of parasitic capacitance between Gate and Drain, which also contributes to improved power efficiency and downsizing of products.

TT-MU-757-TK31Z60XS1F
in stock INR 1714.96952
Toshiba
1 1

MOSFET TO-247-4L PD=230W 1MHz PWR MOSFET TRNS

Sku: TT-MU-757-TK31Z60XS1F
₹1,714.97


Sold By: tenettech
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Description of product

DTMOSIV-H MOSFETs

Toshiba DTMOSIV-H MOSFETs are suited to applications that require high reliability, power efficiency and a compact design, such as high efficiency switching power supplies for servers and telecom base stations, and as power conditioners for photovoltaic inverters. The DTMOSIV-H MOSFETs achieve a high speed switching performance while keeping the low ON-resistance level of conventional DTMOSIV, and without loss of power. This is accomplished through the reduction of parasitic capacitance between Gate and Drain, which also contributes to improved power efficiency and downsizing of products.