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606ee432038cc3cbd2b0f89b MOSFET TO-220SIS PD=40W 1MHz PWR MOSFET TRNS //d2pyicwmjx3wii.cloudfront.net/s/59c9e4669bd3e7c70c5f5e6c/606ee432038cc3cbd2b0f89d/webp/to-220sis.png

π-MOS IX Planar Power MOSFETs

Toshiba π-MOS IX Planar Power MOSFETs offer high efficiency and low noise in a compact TO-220SIS package. π-MOS IX Series MOSFETs provide optimal performance due to the double-diffused process design adjustment. With an optimized chip design, the π-MOS IX series provides 5dB lower peak EMI noise than the previous π-MOS VII series, while maintaining the same level of efficiency. These N-channel Power MOSFETs offer greater design flexibility, reducing design workloads. In addition, the π-MOS IX series has the same rated avalanche current and rated drain current (DC), making it simple to replace existing MOSFETs.

TT-MU-757-TK1K0A60FS4X
in stockINR 168.63616
Toshiba
1 1
MOSFET TO-220SIS PD=40W 1MHz PWR MOSFET TRNS

MOSFET TO-220SIS PD=40W 1MHz PWR MOSFET TRNS

Sku: TT-MU-757-TK1K0A60FS4X
₹168.64


Sold By: tenettech
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Description of product

π-MOS IX Planar Power MOSFETs

Toshiba π-MOS IX Planar Power MOSFETs offer high efficiency and low noise in a compact TO-220SIS package. π-MOS IX Series MOSFETs provide optimal performance due to the double-diffused process design adjustment. With an optimized chip design, the π-MOS IX series provides 5dB lower peak EMI noise than the previous π-MOS VII series, while maintaining the same level of efficiency. These N-channel Power MOSFETs offer greater design flexibility, reducing design workloads. In addition, the π-MOS IX series has the same rated avalanche current and rated drain current (DC), making it simple to replace existing MOSFETs.