ON Semiconductor NVMFS3D6N10MCL Single N-Channel Power MOSFET is designed for compact and efficient designs with high thermal performance. This MOSFET features low drain-to-source resistance (RDS(on)) to minimize conduction losses and low QG/capacitance to minimize driver losses. The NVMFS3D6N10MCL MOSFET is AEC-Q101 qualified and PPAP capable. This MOSFET comes in a small DFN5 flat lead package with 5mm x 6mm dimensions. Typical applications include 48V systems, switching power supplies, power switches (high side driver, low side driver, and H-bridges), and reverse battery protection.
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ON Semiconductor NVMFS3D6N10MCL Single N-Channel Power MOSFET is designed for compact and efficient designs with high thermal performance. This MOSFET features low drain-to-source resistance (RDS(on)) to minimize conduction losses and low QG/capacitance to minimize driver losses. The NVMFS3D6N10MCL MOSFET is AEC-Q101 qualified and PPAP capable. This MOSFET comes in a small DFN5 flat lead package with 5mm x 6mm dimensions. Typical applications include 48V systems, switching power supplies, power switches (high side driver, low side driver, and H-bridges), and reverse battery protection.
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