MOSFET Silicon Carbide MOSFET, N-Channel, 1200 V, 160 mO, TO247-4L

Sku: TT-MU-863-NTH4L160N120SC1

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Description of product


ON Semiconductor 1200V SiC MOSFETs feature completely new technology and provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low capacitance and gate charge. The 1200V SiC MOSFETs provide system benefits and include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, low capacitance, and operate at -55°C to 175°C temperature range. The 1200V SiC MOSFETs are AEC-Q101 automotive qualified and are RoHS compliant. These MOSFETs are best suited for boost inverter, charging stations, DC-DC inverter, DC-DC converter, On-Board Charger (OBC), motor control, industrial power supply, and server power supply.