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MOSFET SIC-MOSFET TO-3PN V=1200

MOSFET SIC-MOSFET TO-3PN V=1200

Sku: TT-MU-757-TW070J120BS1Q
₹3,895


Sold By: tenettech
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Description of product

TW070J120B 1200V SiC N-Channel MOSFET

Toshiba TW070J120B 1200V SiC N-Channel MOSFET features a low (70mΩ) RDSon in a TO-3P(N) package. This new structure prevents energizing of the PN diode by positioning an SBD in parallel to the PN diode inside the cell. Current flows through the embedded SBD because its on-state voltage compared is lower than that of the PN diode, suppressing changes in on-resistance and degradation of the MOSFET’s reliability. MOSFETs with embedded SBDs are in practical use, but only in high-voltages around 3.3kV. Normally, embedded SBDs cause on-resistance to rise to a level that only high-voltage products can tolerate. The Toshiba TW070J120B has adjusted various parameters and found that the ratio of the SBD area in a MOSFET is the key for suppressing increased on-resistance. By optimizing the SBD ratio, Toshiba has created a highly reliable 1.2kV class SiC MOSFET.