Toshiba TW070J120B 1200V SiC N-Channel MOSFET features a low (70mΩ) RDSon in a TO-3P(N) package. This new structure prevents energizing of the PN diode by positioning an SBD in parallel to the PN diode inside the cell. Current flows through the embedded SBD because its on-state voltage compared is lower than that of the PN diode, suppressing changes in on-resistance and degradation of the MOSFET’s reliability. MOSFETs with embedded SBDs are in practical use, but only in high-voltages around 3.3kV. Normally, embedded SBDs cause on-resistance to rise to a level that only high-voltage products can tolerate. The Toshiba TW070J120B has adjusted various parameters and found that the ratio of the SBD area in a MOSFET is the key for suppressing increased on-resistance. By optimizing the SBD ratio, Toshiba has created a highly reliable 1.2kV class SiC MOSFET.
Subscribe to get Email Updates!
Thanks for subscribe.
Your response has been recorded.
Tenet Technetronics focuses on “Simplifying Technology for Life” and has been striving to deliver the same from the day of its inception since 2007. Founded by young set of graduates with guidance from ardent professionals and academicians the company focuses on delivering high quality products to its customers at the right cost considering the support and lifelong engagement with customers. “We don’t believe in a sell and forget model “and concentrate and building relationships with customers that accelerates, enhances as well as provides excellence in their next exciting project.