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606ee4081e2537cc3d03c669 MOSFET PWR MOS PD=88.2W F=1MHZ //d2pyicwmjx3wii.cloudfront.net/s/59c9e4669bd3e7c70c5f5e6c/606ee4081e2537cc3d03c66b/webp/dpak.png

U-MOSVIII-H Low Voltage High Efficiency MOSFETs

Toshiba's U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, etc., as well as DC-DC power supplies for communication equipment, servers and data centers. Fabricated with the latest Gen-8 trench MOS process, these will help improve the efficiency of power supplies. Features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness. U-MOSVIII-H now includes new automotive-qualified MOSFETs in a small package.

TT-MU-757-TK40S06N1LLQ
in stockINR 176.16456
Toshiba
1 1
MOSFET PWR MOS PD=88.2W F=1MHZ

MOSFET PWR MOS PD=88.2W F=1MHZ

Sku: TT-MU-757-TK40S06N1LLQ
₹176.16


Sold By: tenettech
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Description of product

U-MOSVIII-H Low Voltage High Efficiency MOSFETs

Toshiba's U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, etc., as well as DC-DC power supplies for communication equipment, servers and data centers. Fabricated with the latest Gen-8 trench MOS process, these will help improve the efficiency of power supplies. Features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness. U-MOSVIII-H now includes new automotive-qualified MOSFETs in a small package.