Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs are offered with a drain-source voltage range of 250V up to 650V, and with a drain current range from 2A to 20A. The π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through hole packages, and compact DPAK-3 and PW-Mold-3 surface mount packages.
Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs are offered with a drain-source voltage range of 250V up to 650V, and with a drain current range from 2A to 20A. The π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through hole packages, and compact DPAK-3 and PW-Mold-3 surface mount packages.
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