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606ee477f28bb5cc0c57d28a MOSFET PTD HIGH VOLTAGE //d2pyicwmjx3wii.cloudfront.net/s/59c9e4669bd3e7c70c5f5e6c/606ee477f28bb5cc0c57d28c/webp/to-247-3.png

600V MDmesh™ DM6 Super-junction MOSFETs

STMicroelectronics 600V MDmesh™ DM6 Super-junction MOSFETs are optimized for ZVS, full-bridge, and half-bridge topologies. With a breakdown voltage of 600V, the MDmesh DM6 Power MOSFETs combine an optimized capacitance profile and lifetime killing process. The MDmesh DM6 MOSFETs offer a low gate charge (Qg), very low recovery charge (Qrr), low recovery time (trr), and an excellent RDS(on) per area.

TT-MU-511-STW75N60DM6
in stock INR 1859.5148
STMicroelectronics
1 1

MOSFET PTD HIGH VOLTAGE

Sku: TT-MU-511-STW75N60DM6
₹1,859.51


Sold By: tenettech
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Description of product

600V MDmesh™ DM6 Super-junction MOSFETs

STMicroelectronics 600V MDmesh™ DM6 Super-junction MOSFETs are optimized for ZVS, full-bridge, and half-bridge topologies. With a breakdown voltage of 600V, the MDmesh DM6 Power MOSFETs combine an optimized capacitance profile and lifetime killing process. The MDmesh DM6 MOSFETs offer a low gate charge (Qg), very low recovery charge (Qrr), low recovery time (trr), and an excellent RDS(on) per area.