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900V 170mΩ Gallium Nitride (GaN) FET
Transphorm 900V 170mΩ Gallium Nitride (GaN) FET is a normally-off device that offers superior reliability and performance. The device combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, crossover loss, and smaller reverse recovery charge. The device is housed in a 3-lead TO-220 with a common source package configuration.
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- MOSFET GAN FET 900V 34A TO247
MOSFET GAN FET 900V 34A TO247
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Description of product
900V 170mΩ Gallium Nitride (GaN) FET
Transphorm 900V 170mΩ Gallium Nitride (GaN) FET is a normally-off device that offers superior reliability and performance. The device combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, crossover loss, and smaller reverse recovery charge. The device is housed in a 3-lead TO-220 with a common source package configuration.
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INFORMATION
ACCOUNT
ADDRESS
Tenet Technetronics# 2514/U, 7th 'A' Main Road, Opp. to BBMP Swimming Pool, Hampinagar, Vijayanagar 2nd Stage.
Bangalore
Karnataka - 560104
IN
Tenet Technetronics focuses on “Simplifying Technology for Life” and has been striving to deliver the same from the day of its inception since 2007. Founded by young set of graduates with guidance from ardent professionals and academicians the company focuses on delivering high quality products to its customers at the right cost considering the support and lifelong engagement with customers. “We don’t believe in a sell and forget model “and concentrate and building relationships with customers that accelerates, enhances as well as provides excellence in their next exciting project.