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606ecec1309f19356124a287 MOSFET GAN FET 900V 34A TO247 //d2pyicwmjx3wii.cloudfront.net/s/59c9e4669bd3e7c70c5f5e6c/606ecec1309f19356124a289/webp/to-247-3_t.png

900V 170mΩ Gallium Nitride (GaN) FET

Transphorm 900V 170mΩ Gallium Nitride (GaN) FET is a normally-off device that offers superior reliability and performance. The device combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, crossover loss, and smaller reverse recovery charge. The device is housed in a 3-lead TO-220 with a common source package configuration.

TT-MU-227-TP90H050WS
in stock INR 2902.95104
Transphorm
1 1

MOSFET GAN FET 900V 34A TO247

Sku: TT-MU-227-TP90H050WS
₹2,902.95


Sold By: tenettech
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Description of product

900V 170mΩ Gallium Nitride (GaN) FET

Transphorm 900V 170mΩ Gallium Nitride (GaN) FET is a normally-off device that offers superior reliability and performance. The device combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, crossover loss, and smaller reverse recovery charge. The device is housed in a 3-lead TO-220 with a common source package configuration.