MOSFET GAN FET 900V 34A TO247
Sku: TT-MU-227-TP90H050WS
₹1,928
Features
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Description of product
900V 170mΩ Gallium Nitride (GaN) FET
Transphorm 900V 170mΩ Gallium Nitride (GaN) FET is a normally-off device that offers superior reliability and performance. The device combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, crossover loss, and smaller reverse recovery charge. The device is housed in a 3-lead TO-220 with a common source package configuration.
