MOSFET 750V 60mOhm, SiC CASCODE, G4, TO-247-3L

UJ4C 750V Gen 4 SiC FETs

UnitedSiC UJ4C 750V Gen 4 SiC (Silicon Carbide) FETs are based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si FET to produce a normally-off SiC FET device. The UJ4C 750V Gen 4 SiC FETs are designed to accelerate the power performance gains in automotive and industrial charging, telecom rectifiers, datacenter PFC DC-DC conversion, as well as renewable energy and energy storage applications. Available in 18mΩ and 60mΩ options, these new SiC FETs deliver best-in-class Figures of Merit (FoM) with reduced on-resistance per unit area and low intrinsic capacitance. In hard-switching applications, the Gen 4 FETs exhibit ultra-low R_DS(on) x E_OSS, resulting in lower turn-on and turn-off loss.

DataSheet: