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MOSFET 650V NCH SIC TRENCH

MOSFET 650V NCH SIC TRENCH

Sku: TT-MU-755-SCT3080ARC14
₹1,698


Sold By: tenettech
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Description of product

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.