UnitedSiC UF3SC High-Performance SiC FETs are silicon carbide devices with first SiC FET with RDS(on) <10mΩ built for fast switching speeds and lower switching losses. This is based on a unique cascode circuit configuration and exhibits an ultra-low gate charge. The cascode configuration employs a normally-on SiC JFET that is co-packaged with a Silicon MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These SiC FETs include low intrinsic capacitance and excellent reverse recovery. The UF3SC FETs operate at -55°C to +175°C temperature range and -20V to +20V gate-source voltage range. These SiC FETs are ideal for use in EV charging, PV inverters, motor drives, switch-mode power supplies, power factor correction modules, and induction heating.
Subscribe to get Email Updates!
Thanks for subscribe.
Your response has been recorded.
Tenet Technetronics focuses on “Simplifying Technology for Life” and has been striving to deliver the same from the day of its inception since 2007. Founded by young set of graduates with guidance from ardent professionals and academicians the company focuses on delivering high quality products to its customers at the right cost considering the support and lifelong engagement with customers. “We don’t believe in a sell and forget model “and concentrate and building relationships with customers that accelerates, enhances as well as provides excellence in their next exciting project.