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606ee41886617735b129bd01 MOSFET 650V, 60A, GaN E-mode, GaNPX package, Top-side cooling https://cdn1.storehippo.com/s/59c9e4669bd3e7c70c5f5e6c/606ee41886617735b129bd03/webp/gs66516b_dsl.png

GS665xx Enhancement-Mode Silicon Power Transistors

GaN Systems GS665xx Enhancement-Mode High Electron Mobility Transistors (E-HEMT) feature high current, high voltage breakdown, and high switching frequency. These power transistors include Island Technology cell layout with high-current die and high-yield, and GaNPX®  small packaging enables low inductance and low thermal resistance. These power transistors offer very low junction-to-case thermal resistance for high power applications. The GS665xx enhancement-mode silicon power transistors are available as bottom-sided or top-sided cooled transistors. These power transistors provide ultra-low FOM die, reverse current capability, and zero reverse recovery loss.

 TT-MU-499-GS66516B-MR
in stock INR 6364.50936
GaN Systems
1 1
MOSFET 650V, 60A, GaN E-mode, GaNPX package, Top-side cooling

MOSFET 650V, 60A, GaN E-mode, GaNPX package, Top-side cooling

Sku: TT-MU-499-GS66516B-MR
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Description of product

GS665xx Enhancement-Mode Silicon Power Transistors

GaN Systems GS665xx Enhancement-Mode High Electron Mobility Transistors (E-HEMT) feature high current, high voltage breakdown, and high switching frequency. These power transistors include Island Technology cell layout with high-current die and high-yield, and GaNPX®  small packaging enables low inductance and low thermal resistance. These power transistors offer very low junction-to-case thermal resistance for high power applications. The GS665xx enhancement-mode silicon power transistors are available as bottom-sided or top-sided cooled transistors. These power transistors provide ultra-low FOM die, reverse current capability, and zero reverse recovery loss.

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