GaN Systems GS665xx Enhancement-Mode High Electron Mobility Transistors (E-HEMT) feature high current, high voltage breakdown, and high switching frequency. These power transistors include Island Technology cell layout with high-current die and high-yield, and GaNPX® small packaging enables low inductance and low thermal resistance. These power transistors offer very low junction-to-case thermal resistance for high power applications. The GS665xx enhancement-mode silicon power transistors are available as bottom-sided or top-sided cooled transistors. These power transistors provide ultra-low FOM die, reverse current capability, and zero reverse recovery loss.
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Tenet Technetronics focuses on “Simplifying Technology for Life” and has been striving to deliver the same from the day of its inception since 2007. Founded by young set of graduates with guidance from ardent professionals and academicians the company focuses on delivering high quality products to its customers at the right cost considering the support and lifelong engagement with customers. “We don’t believe in a sell and forget model “and concentrate and building relationships with customers that accelerates, enhances as well as provides excellence in their next exciting project.