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606ecf07309f19356124a91b MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC //d2pyicwmjx3wii.cloudfront.net/s/59c9e4669bd3e7c70c5f5e6c/606ecf07309f19356124a91d/webp/powerpak_so_8dc_8_dsl.png

TrenchFET® Gen IV Top-Side Double Cooling MOSFETs

Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.

TT-MU-78-SIDR390DP-T1-GE3
in stockINR 377.92568
Vishay Semiconductors
1 1
MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC

MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC

Sku: TT-MU-78-SIDR390DP-T1-GE3
₹377.93


Sold By: tenettech
Features
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Description of product

TrenchFET® Gen IV Top-Side Double Cooling MOSFETs

Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.