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606ee3bc1e2537cc3d03bd77 MOSFET 1700V 400mOhm SiC CASCODE FAST, G3, TO-247-3L //d2pyicwmjx3wii.cloudfront.net/s/59c9e4669bd3e7c70c5f5e6c/606ee3bc1e2537cc3d03bd79/webp/to-247-3l_t.png

UF3C SiC FETs

United Silicon Carbide UF3C High-Performance SiC FETs are cascode products that co-package high-performance G3 SiC JFETs with a cascode optimized Si MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge and are excellent for switching inductive loads, and any application requiring a standard gate drive. They are available in 650V and 1200V versions and come in TO-247-3L, TO-247-4L, and D2PAK-3L packages. 

TT-MU-431-UF3C170400K3S
in stockINR 1195.50992
UnitedSiC
1 1
MOSFET 1700V 400mOhm SiC CASCODE FAST, G3, TO-247-3L

MOSFET 1700V 400mOhm SiC CASCODE FAST, G3, TO-247-3L

Sku: TT-MU-431-UF3C170400K3S
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Description of product

UF3C SiC FETs

United Silicon Carbide UF3C High-Performance SiC FETs are cascode products that co-package high-performance G3 SiC JFETs with a cascode optimized Si MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge and are excellent for switching inductive loads, and any application requiring a standard gate drive. They are available in 650V and 1200V versions and come in TO-247-3L, TO-247-4L, and D2PAK-3L packages. 

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