SHOP FOR
http://base-store.storehippo.com/
# 2514/U, 7th 'A' Main Road, Opp. to BBMP Swimming Pool, Hampinagar, Vijayanagar 2nd Stage. 560104 Bangalore IN
Tenettech E-Store
# 2514/U, 7th 'A' Main Road, Opp. to BBMP Swimming Pool, Hampinagar, Vijayanagar 2nd Stage. Bangalore, IN
+918023404924 https://cdn1.storehippo.com/s/59c9e4669bd3e7c70c5f5e6c/ms.settings/5256837ccc4abf1d39000001/webp/59dafe26aef6e1d20402c4c3-480x480.png" info@tenettech.com
606ee3b5681b89cc64692b2e MOSFET 1200V 9mOhm SiC STACKED CASCODE FAST, G3, TO-247-4L https://cdn1.storehippo.com/s/59c9e4669bd3e7c70c5f5e6c/606ee3b5681b89cc64692b30/webp/to-247-4l_t.png

UF3SC High-Performance SiC FETs

UnitedSiC UF3SC High-Performance SiC FETs are silicon carbide devices with first SiC FET with RDS(on) <10mΩ built for fast switching speeds and lower switching losses. This is based on a unique cascode circuit configuration and exhibits an ultra-low gate charge. The cascode configuration employs a normally-on SiC JFET that is co-packaged with a Silicon MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These SiC FETs include low intrinsic capacitance and excellent reverse recovery. The UF3SC FETs operate at -55°C to +175°C temperature range and -20V to +20V gate-source voltage range. These SiC FETs are ideal for use in EV charging, PV inverters, motor drives, switch-mode power supplies, power factor correction modules, and induction heating.

TT-MU-431-UF3SC120009K4S
in stock INR 10931.2368
UnitedSiC
1 1

MOSFET 1200V 9mOhm SiC STACKED CASCODE FAST, G3, TO-247-4L

Sku: TT-MU-431-UF3SC120009K4S
₹10,931.24


Sold By: tenettech
Features
  • Shipping in 10-12 Working Days

Description of product

UF3SC High-Performance SiC FETs

UnitedSiC UF3SC High-Performance SiC FETs are silicon carbide devices with first SiC FET with RDS(on) <10mΩ built for fast switching speeds and lower switching losses. This is based on a unique cascode circuit configuration and exhibits an ultra-low gate charge. The cascode configuration employs a normally-on SiC JFET that is co-packaged with a Silicon MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These SiC FETs include low intrinsic capacitance and excellent reverse recovery. The UF3SC FETs operate at -55°C to +175°C temperature range and -20V to +20V gate-source voltage range. These SiC FETs are ideal for use in EV charging, PV inverters, motor drives, switch-mode power supplies, power factor correction modules, and induction heating.