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606ee3b5f28bb5cc0c57bff4 MOSFET 1200V 16mOhm SiC STACKED CASCODE FAST, G3, TO-247-4L //d2pyicwmjx3wii.cloudfront.net/s/59c9e4669bd3e7c70c5f5e6c/606ee3b5f28bb5cc0c57bff6/webp/to-247-4l_t.png

UF3SC High-Performance SiC FETs

UnitedSiC UF3SC High-Performance SiC FETs are silicon carbide devices with first SiC FET with RDS(on) <10mΩ built for fast switching speeds and lower switching losses. This is based on a unique cascode circuit configuration and exhibits an ultra-low gate charge. The cascode configuration employs a normally-on SiC JFET that is co-packaged with a Silicon MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These SiC FETs include low intrinsic capacitance and excellent reverse recovery. The UF3SC FETs operate at -55°C to +175°C temperature range and -20V to +20V gate-source voltage range. These SiC FETs are ideal for use in EV charging, PV inverters, motor drives, switch-mode power supplies, power factor correction modules, and induction heating.

TT-MU-431-UF3SC120016K4S
in stock INR 7686.4964
UnitedSiC
1 1

MOSFET 1200V 16mOhm SiC STACKED CASCODE FAST, G3, TO-247-4L

Sku: TT-MU-431-UF3SC120016K4S
₹7,686.5


Sold By: tenettech
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Description of product

UF3SC High-Performance SiC FETs

UnitedSiC UF3SC High-Performance SiC FETs are silicon carbide devices with first SiC FET with RDS(on) <10mΩ built for fast switching speeds and lower switching losses. This is based on a unique cascode circuit configuration and exhibits an ultra-low gate charge. The cascode configuration employs a normally-on SiC JFET that is co-packaged with a Silicon MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These SiC FETs include low intrinsic capacitance and excellent reverse recovery. The UF3SC FETs operate at -55°C to +175°C temperature range and -20V to +20V gate-source voltage range. These SiC FETs are ideal for use in EV charging, PV inverters, motor drives, switch-mode power supplies, power factor correction modules, and induction heating.