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6017c153a7aa6a96b46f417c IRLML2502TRPBF - International Rectifier - MOSFET SOT-23 //d2pyicwmjx3wii.cloudfront.net/s/59c9e4669bd3e7c70c5f5e6c/6017c153a7aa6a96b46f417e/webp/ec-smd-transistor.jpg

IRLML2502TRPBF International Rectifier - MOSFET - SOT23

General description


These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
 

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint.  This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium.  The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.

Specification
  • Transistor Polarity: N Channel
  • Continuous Drain Current Id: 4.2A
  • Threshold Voltage Vgs Typ: 1.2V
  • Drain Source Voltage Vds: 20V
  • On Resistance Rds(on): 45mohm
  • Rds(on) Test Voltage Vgs: 4.5V
  • Power Dissipation Pd: 1.25W
  • ransistor Case Style: µSOIC
  • Current Id Max: 4.2A
  • Power Dissipation Pd: 1.25W
  • Termination Type: SMD
  • Voltage Vds Typ: 20V
  • Voltage Vgs Max: 1.2V
  • Voltage Vgs Rds on Measurement: 4.5V
  • No. of Pins: 3
 
* Image shown is a representation only.
 TT-ECK-3172
in stock INR 21.24
ELECTRON COMPONENT
1 1
ec-smd-transistor-1000x1000.jpg

IRLML2502TRPBF - International Rectifier - MOSFET SOT-23

Sku: TT-ECK-3172
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₹21.24
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Description of product

IRLML2502TRPBF International Rectifier - MOSFET - SOT23

General description


These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
 

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint.  This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium.  The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.

Specification
  • Transistor Polarity: N Channel
  • Continuous Drain Current Id: 4.2A
  • Threshold Voltage Vgs Typ: 1.2V
  • Drain Source Voltage Vds: 20V
  • On Resistance Rds(on): 45mohm
  • Rds(on) Test Voltage Vgs: 4.5V
  • Power Dissipation Pd: 1.25W
  • ransistor Case Style: µSOIC
  • Current Id Max: 4.2A
  • Power Dissipation Pd: 1.25W
  • Termination Type: SMD
  • Voltage Vds Typ: 20V
  • Voltage Vgs Max: 1.2V
  • Voltage Vgs Rds on Measurement: 4.5V
  • No. of Pins: 3
 
* Image shown is a representation only.

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