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6017bf3174048562e8948be8 IRFP260 MOSFET N Channel Transistor [Original IRF] //cdn1.storehippo.com/s/59c9e4669bd3e7c70c5f5e6c/6017bf3174048562e8948bea/webp/ec-trans-w.jpg

IRFP260N - MOSFET N Channel Power Transistor [International Rectifier]

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole
 
Feature
  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Ease of Paralleling
  • Simple Drive Requirements
 
* Image shown is a representation only.
TT-ECK-2797
in stock INR 118
ELECTRON COMPONENT
1 1

IRFP260 MOSFET N Channel Transistor [Original IRF]

Sku: TT-ECK-2797
₹118


Sold By: tenettech
Features
  • Shipping in 10-12 Working days

Description of product

IRFP260N - MOSFET N Channel Power Transistor [International Rectifier]

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole
 
Feature
  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Ease of Paralleling
  • Simple Drive Requirements
 
* Image shown is a representation only.