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606ed02264fa4981b49aab61 IGBT Transistors SIC DISCRETE //d2pyicwmjx3wii.cloudfront.net/s/59c9e4669bd3e7c70c5f5e6c/60dc22715cdb402a023a4a9d/webp/capture387.PNG

CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltages classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter-set, which is used for the implementation of application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

* Image is only ment for representation

TT-MU-726-IMBG120R140M1HXT
in stockINR 1842.95232
Infineon Technologies
1 1
IGBT Transistors SIC DISCRETE

IGBT Transistors SIC DISCRETE

Sku: TT-MU-726-IMBG120R140M1HXT
₹1,842.95


Sold By: tenettech
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Description of product

CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltages classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter-set, which is used for the implementation of application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

* Image is only ment for representation