Toshiba GT20N135SRA Silicon N-Channel IGBT is a 6.5th generation IGBT and consists of a Freewheeling Diode (FWD) monolithically integrated into an IGBT chip. This IGBT features a low saturation voltage of 1.60V and operates at a maximum of 175°C high junction temperature and 0.25µs of high-speed switching. The GT20N135SRA Silicon N-Channel IGBT is ideal for voltage-resonant inverter switching, soft switching, and induction cooktops and home appliance applications.
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