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606ee451bea5f164e50829a3 IGBT Transistors 650V 40A FIELD STOP TRENCH //d2pyicwmjx3wii.cloudfront.net/s/59c9e4669bd3e7c70c5f5e6c/606ee451bea5f164e50829a5/webp/to-247n-3_spl.png

RGS Field Stop Trench Automotive IGBTs

ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs are AEC-Q101 rated automotive IGBTs that are available in 1200V and 650V variants. These IGBTs deliver class-leading low conduction loss that contributes to reducing the size and improving the efficiency of applications. The RGS IGBTs utilize original trench-gate and thin-wafer technologies. These technologies help to achieve low collector-emitter saturation voltage (VCE(sat)) with reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current applications.

TT-MU-755-RGS80TS65HRC11
in stockINR 913.94776
1 1
IGBT Transistors 650V 40A FIELD STOP TRENCH

IGBT Transistors 650V 40A FIELD STOP TRENCH

Sku: TT-MU-755-RGS80TS65HRC11
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Description of product

RGS Field Stop Trench Automotive IGBTs

ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs are AEC-Q101 rated automotive IGBTs that are available in 1200V and 650V variants. These IGBTs deliver class-leading low conduction loss that contributes to reducing the size and improving the efficiency of applications. The RGS IGBTs utilize original trench-gate and thin-wafer technologies. These technologies help to achieve low collector-emitter saturation voltage (VCE(sat)) with reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current applications.

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