GS61004B-EVBCD

Description of product

100 V GaN E-HEMT FB EVB Optimized for Class D Amplifiers

The GS61004B-EVBCD evaluation board allows the user to evaluate our GaN Systems’ GS61004B Enhancement mode-High Electron Mobility Transistors (E-HEMTs) with the Peregrine PE29102 gate driver in a full-bridge configuration.  The design is optimized for Class D amplifier applications. The outputs of the PE29102 are capable of providing switching transition speeds in the sub nano-second range for hard switching applications.

  • GaN transistors operable up to 100 MHz
  • Transistor driver operable up to 40MHz
  • Best-in-class propagation delay
  • Optimized, Vcc independent, for matched dead time
  • Integrated dead-time control, resistor-adjustable