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5ad44c8ecb11450d704b7013 GS61004B-EVBCD https://cdn1.storehippo.com/s/59c9e4669bd3e7c70c5f5e6c/ms.products/5ad44c8ecb11450d704b7013/images/5ad44c8ecb11450d704b7014/5ad44b2071c0780deaf30528/webp/5ad44b2071c0780deaf30528.jpg

100 V GaN E-HEMT FB EVB Optimized for Class D Amplifiers

The GS61004B-EVBCD evaluation board allows the user to evaluate our GaN Systems’ GS61004B Enhancement mode-High Electron Mobility Transistors (E-HEMTs) with the Peregrine PE29102 gate driver in a full-bridge configuration.  The design is optimized for Class D amplifier applications. The outputs of the PE29102 are capable of providing switching transition speeds in the sub nano-second range for hard switching applications.

  • GaN transistors operable up to 100 MHz
  • Transistor driver operable up to 40MHz
  • Best-in-class propagation delay
  • Optimized, Vcc independent, for matched dead time
  • Integrated dead-time control, resistor-adjustable
TT-M-499-GS61004B-EVBCD
in stock INR 10532.7
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GS61004B-EVBCD

Description of product

100 V GaN E-HEMT FB EVB Optimized for Class D Amplifiers

The GS61004B-EVBCD evaluation board allows the user to evaluate our GaN Systems’ GS61004B Enhancement mode-High Electron Mobility Transistors (E-HEMTs) with the Peregrine PE29102 gate driver in a full-bridge configuration.  The design is optimized for Class D amplifier applications. The outputs of the PE29102 are capable of providing switching transition speeds in the sub nano-second range for hard switching applications.

  • GaN transistors operable up to 100 MHz
  • Transistor driver operable up to 40MHz
  • Best-in-class propagation delay
  • Optimized, Vcc independent, for matched dead time
  • Integrated dead-time control, resistor-adjustable