Gate Drivers Automotive ±10-A 5.7kV RMS single channel isolated gate driver for SiC/IGBT with overcurre 16-SOIC -40 to 125

Sku: TT-MU-595-UCC21710QDWQ1

Sold By: tenettech
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Description of product

UCC21710-Q1 SiC/IGBT Isolated Gate Driver

Texas Instruments UCC21710-Q1 SiC/IGBT Isolated Gate Driver is a galvanic isolated single-channel gate driver designed for up to 1700V SiC MOSFETs and IGBTs. This device offers advanced protection features, best-in-class dynamic performance, and robustness. UCC21710-Q1 has up to ±10A peak source and sink current. The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years of isolation barrier life. It also provides low part-to-part skew, and > 150V/ns common-mode noise immunity (CMTI). The UCC21710-Q1 includes state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, and fault reporting. It also includes active miller clamp and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.