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H20R1203 H20R 1203 IGBT power transistor - 20A / 1200V - (Original)

Description of product

H20R1203 IGBT power transistor

Specifications/Feature

  • Powerful monolithic body diode with low forward voltage designed for soft commutation only
  • very tight parameter distribution
  • high ruggedness,temperature stable behavior
  • lowVCEsat
  • easy parallel switching capability due to positive temperature coefficient in VCEsat
  • LowEMI
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating; ROHS complaint
  • Collector-emitter voltage VCE: 1200 V
  • DC collector current,limited by Tvjmax IC: 40A at 25°C and 20A at 100°C
  • Gate-emitter voltage / Transient Gate-emitter voltage, ) VGE :±20 to ±25volt
  • VCEsat :1.48V at 25°C
  • Tvjmax :175°C

Applications:

  • Inductive cooking
  • Inverterized microwave ovens
  • Resonant converters
  • Softs witching applications
  • Electronics Projects

* Image shown is a representation only.