IRFP460 MOSFET N Channel Transistor [Original IRF]

Description of product

IRFP460 - MOSFET N Channel Power Transistor [International Rectifier]

The HEXFET technology is the key to international Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "state of the art" design achieves: very low on-state resistance combined with high transconductances; superior reverse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parallelling and temperature stabilty of the electrical parameters.
  • Drain-Source Volt (Vds): 500V
  • Gate-Source Volt (Vgs): 20V
  • Drain Current (Id): 20A
  • Power Dissipation (Ptot): 280W
  • Type: N-Channel
* Image shown is a representation only.