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IRFP460 MOSFET N Channel Transistor [Original IRF]

Description of product

IRFP460 - MOSFET N Channel Power Transistor [International Rectifier]

The HEXFET technology is the key to international Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "state of the art" design achieves: very low on-state resistance combined with high transconductances; superior reverse energy and diode recovery dv/dt capability.
 
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parallelling and temperature stabilty of the electrical parameters.
 
Feature
  • Drain-Source Volt (Vds): 500V
  • Gate-Source Volt (Vgs): 20V
  • Drain Current (Id): 20A
  • Power Dissipation (Ptot): 280W
  • Type: N-Channel
 
* Image shown is a representation only.