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2N3906 PNP General Purpose Transistor (BJT)

Description of product

2N3906 PNP General Purpose Transistor (Bipolar Junction Transistor)

  • Collector-Emitter Volt (Vceo): 40V
  • Collector-Base Volt (Vcbo): 40V
  • Collector Current (Ic): 0.2A
  • hfe: 100-300 @ 10mA
  • Power Dissipation (Ptot): 625mW
  • Current-Gain-Bandwidth (ftotal): 250MHz
  • Type: NPN
  • Package Type: TO-92

* Image shown is a representation only.