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BF199 NPN RF Transistor

Description of product

BF199 NPN RF Transistor

 

Features
  • Collector-Emitter Volt (Vceo): 25V
  • Collector Current (Ic): 0.1A
  • hfe: 85 @ 7mA
  • Power Dissipation (Ptot): 350mW
  • Current-Gain-Bandwidth (ftotal): 750MHz
  • Type: NPN

* Image shown is a representation only.