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2N7000 N-Channel Enhancement FET

Description of product

2N7000 TMOS FET N-Channel Transistor

Feature & Specification
  • Drain-Source Volt (Vds): 60V
  • Drain-Gate Volt (Vdg): 60V
  • Gate-Source Volt (Vgs): ±20V
  • Drain Current (Id): 0.2A
  • Power Dissipation (Ptot): 350mW
  • Type: N-Channel
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