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BS170 N-Channel Switching FET

Description of product

BS170 (N-Channel Switching fet)

Feature & Specification
  • Drain-Source Volt (Vds): 60V
  • Gate-Source Volt (Vgs): 20V
  • Drain Current(1) 0.5 Adc
  • Total Device Dissipation @ TA = 25°C PD 350 mW
  • Operating and Storage Junction
    • Temperature Range TJ, Tstg –55 to +150 °C
  • Type: N-Channel
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