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IRF640N Power MOSFET TO-220 Package 200V 18A N Channel

Description of product

IRF640N MOSFET - N-Channel Transistor(Hexfet Power Mosfet)

Specifications

  • Drain-Source Volt (Vds): 200V
  • Drain-Gate Volt (Vdg): 200V
  • Gate-Source Volt (Vgs): 20V
  • Drain Current (Id): 18A
  • Power Dissipation (Ptot): 125W
  • Type: N-Channel
Applications
  • High Current, High Speed Switching
  • Solenoid and Relay Drivers
  • DC-DC & DC-AC Converter
  • Automotive Environment (Injection, ABS, AIR-BAG, Lamp Drivers etc.)
 
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