1N5819 40V 1A  Schottky Barrier Diode

Description of product

1N5819 : 40V 1A - Schottky Barrier Diode

General Description

The Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes.

• Extremely Low vF
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
  • Peak Repet. Reverse Voltage (Vrrm): 40V
  • Max. RMS Reverse Voltage (Vr): 28V
  • Average Rectified Current (Io): 1.0A
  • Max. Reverse Current (Ir): 1.0mA
  • Max. Forward Voltage Drop (Vf): 0.60V

*Image shown is a representation only.